Samsung MZ1L23T8HBLA-00A07 PM9A3 3.84 TB Solid State Drive Review
High Performance SSD Built For Large Data Center Architects
This Samsung MZ1L23T8HBLA-00A07 PM9A3 3.84TB PCIe Gen4 x4 NVMe U.2 Enterprise SSD deliver exceptional performance in public cloud applications, such as infrastructure as a service (IaaS), content delivery networks (CDN), shared hosting, NoSQL databases, and cloud data storage.
The Samsung PM9A3 NVMe SSD supports PCI Express Gen 4, breaking through the read performance bottleneck experienced by SSDs that only support PCI Express Gen 3, and delivering up to 900k IOPS of random read performance. With the PM9A3, I/O operations benefit from hardware acceleration, which improves performance, while containing power consumption. Samsung’s PM9A3 SSD has the power efficiency and cost effectiveness for large scale cloud datacenter deployment, but delivers features usually reserved for high-end enterprise NVMe SSDs.
The Samsung PM9A3 delivers PCIe Gen 4 Performance to the Data Center
Compared to SATA SSDs, this high-performing NVMe PM9A3 SSD deliver more than ten times the read performance and lower latency, while still maintaining SATA cost and low-power consumption per IOP.
Samsung PM9A3 delivers:
PCI Express Gen 4 x4 interface for up to twice the read performance of PCIe Gen 3 SSDs, and dedicated hardware accelerators for more than three times the random write performance of the previous generation.
Protects your data confidentiality and integrity with TCG Opal 2.0 encryption management, secure boot, end to end data protection with DIF/DIX and extended sector size support, and power loss protection circuitry.
Form Factor Flexibility
Available in a variety of form factors to meet the needs of multiple system types in your server deployment. All form factors are built using the same Samsung SSD controllers and VNAND, for high volume availability and simplified SSD qualification.
MZ1L23T8HBLA-00A07 Technical Specifications:
|Form Factor||2.5″ U.2|
|Memory Technology||Samsung V6 (128 Layer) V-NAND|
|Max Sequential Read||Up to 6500 MBps|
|Max Sequential Write||Up to 3500 MBps|
MZ1L23T8HBLA-00A07 Additional Features:
- Random read performance up to 900,000 IOPS
- Samsung V6 128 Layers – V-NAND® flash memory type
- 2,000,000 hours Mean Time Between Failure (MTBF)
- AES-XTS 256-bit Encryption Engine with TCG Opal 2.0 Compliant Management