Samsung MZ-VLB2560 PM981 Series 256GB NVMe Solid State Drive Review
Built with 3D NAND Technology
This Samsung MZ-VLB2560 PM981 Series 256GB NVMe M.2 2280 Internal Solid State Drive incorporates the 64-layer 3D TLC, but the small drive capacity and SATA interface were both limiting the extent to which we could measure the performance improvements the new NAND enables. The SSD also offers a healthy generational improvement to performance due to the combination of a new controller and Samsung’s new 64-layer 3D TLC NAND.
The Samsung PM981 deliver high performance that is more well-rounded than any other TLC-based SSD. The faster 256 GB capacity is almost completely immune to the typical pitfalls of using TLC NAND; it is almost impossible for a real-world workload to trigger the kind of nasty slowdown that typically indicates a full SLC write cache or something else causing a lot of background work for the SSD controller.
Reliability and Performance
The PM981 is fully consist of semiconductor device and using NAND Flash Memory which has a high reliability and a high technology in a small form factor for using a SSD and supporting Peripheral Component Interconnect Express (PCIe) 3.0 interface standard up to 4 lanes shows much faster performance than previous SATA SSDs.
Its sequential performance is up to 3,300MB/s for read operation and 3,000MB/s for write operation by 4 lanes. Its random performance is up to 380k IOPS for read and 440k IOPS for write operation by 4 lanes. It could also provide rugged features with an extreme environment with a high MTBF.
MZ-VLB2560 Technical Specifications:
|Product Type||Solid State Drive|
|Form Factor||M.2 2280|
|Memory Technology||Triple Level Cell (TLC)|
|Random Read IOPS||330000|
|Random Write IOPS||300000|
|Drive Interface||PCI Express 3.0 x4|
MZ-VLB2560 Key Features:
- Latest NVMe Technology
- Big Power in a Small Package
- Fitting Storage for High-End PCs